PHOTOLUMINESCENCE CHARACTERIZATION OF RARE-EARTH (ER,YB)-DOPED INP GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引:9
作者
TAKAHEI, K
UWAI, K
NAKAGOME, H
机构
[1] NTT Electrical Communications Lab, Musashino, Jpn, NTT Electrical Communications Lab, Musashino, Jpn
关键词
CRYSTALS - ERBIUM AND ALLOYS - PHOTOLUMINESCENCE - YTTERBIUM COMPOUNDS;
D O I
10.1016/0022-2313(88)90490-5
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Er-doped and Yb-doped InP epitaxial crystals were grown by MOCVD and photoluminescence (PL) of intra-4f-shell transitions of the rare earth ions was observed. Rare-earth-ion-related PL intensities are observed to increase only sublinearly as a function of excitation photon density. Their decay time constants are about one order of magnitude smaller than those of corresponding rare earth ions in CdS. These results indicate that a strong nonradiative bimolecular decay mechanism is in effect in state-of-the-art crystals and that intra-4f-shell transitions of rare earth ions depend strongly on the host crystals in which the ions are incorporated.
引用
收藏
页码:901 / 902
页数:2
相关论文
共 5 条
[1]   LUMINESCENCE OF RARE-EARTH-ACTIVATED CADMIUM SULFIDE [J].
ANDERSON, WW .
JOURNAL OF CHEMICAL PHYSICS, 1966, 44 (09) :3283-&
[2]   RARE-EARTH IONS IN LPE III-V SEMICONDUCTORS [J].
KORBER, W ;
WEBER, J ;
HANGLEITER, A ;
BENZ, KW ;
ENNEN, H ;
MULLER, HD .
JOURNAL OF CRYSTAL GROWTH, 1986, 79 (1-3) :741-744
[3]   ERBIUM DOPING OF MOLECULAR-BEAM EPITAXIAL GAAS [J].
SMITH, RS ;
MULLER, HD ;
ENNEN, H ;
WENNEKERS, P ;
MAIER, M .
APPLIED PHYSICS LETTERS, 1987, 50 (01) :49-51
[4]   OBSERVATION OF ENHANCED SINGLE LONGITUDINAL MODE-OPERATION IN 1.5-MU-M GAINASP ERBIUM-DOPED SEMICONDUCTOR INJECTION-LASERS [J].
TSANG, WT ;
LOGAN, RA .
APPLIED PHYSICS LETTERS, 1986, 49 (25) :1686-1688
[5]  
UWAI K, 1986, 13TH P INT C GAAS RE, P87