EFFICIENT TWO-DIMENSIONAL MULTILAYER PROCESS SIMULATION OF ADVANCED BIPOLAR-DEVICES

[1] IMPURITY REDISTRIBUTION IN SIO2-SI DURING OXIDATION - NUMERICAL-SOLUTION INCLUDING INTERFACIAL FLUXES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (11) : 1939 - 1945

[2] BACCUS B, 1988, BCTM C MINNEAPOLIS, P164

[3] CHU SF, 1982, VLSI SCI TECHNOLOGY, P306

[4] ON THE PUNCHTHROUGH CHARACTERISTICS OF ADVANCED SELF-ALIGNED BIPOLAR-TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (07) : 1519 - 1524

[5] CHUANG CT, 1987, IEEE ELECTR DEVICE L, V8, P321, DOI 10.1109/EDL.1987.26645

[6] IMPACT - A POINT-DEFECT-BASED TWO-DIMENSIONAL PROCESS SIMULATOR - MODELING THE LATERAL OXIDATION-ENHANCED DIFFUSION OF DOPANTS IN SILICON [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (10) : 1454 - 1462

[7] TWO-DIMENSIONAL PROCESS SIMULATION USING A QUADRATIC FINITE-ELEMENT DISCRETIZATION [J]. COMPEL-THE INTERNATIONAL JOURNAL FOR COMPUTATION AND MATHEMATICS IN ELECTRICAL AND ELECTRONIC ENGINEERING, 1984, 3 (01) : 17 - 33

[8] HECHT F, 1986, INRIA INTERNAL REPOR

[9] VLSI PROCESS MODELING - SUPREM-III [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (11) : 1438 - 1453

[10] TWO-DIMENSIONAL MODELING OF ION-IMPLANTATION WITH SPATIAL MOMENTS [J]. SOLID-STATE ELECTRONICS, 1987, 30 (04) : 445 - 455

[1] IMPURITY REDISTRIBUTION IN SIO2-SI DURING OXIDATION - NUMERICAL-SOLUTION INCLUDING INTERFACIAL FLUXES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (11) : 1939 - 1945

[2] BACCUS B, 1988, BCTM C MINNEAPOLIS, P164

[3] CHU SF, 1982, VLSI SCI TECHNOLOGY, P306

[4] ON THE PUNCHTHROUGH CHARACTERISTICS OF ADVANCED SELF-ALIGNED BIPOLAR-TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (07) : 1519 - 1524

[5] CHUANG CT, 1987, IEEE ELECTR DEVICE L, V8, P321, DOI 10.1109/EDL.1987.26645

[6] IMPACT - A POINT-DEFECT-BASED TWO-DIMENSIONAL PROCESS SIMULATOR - MODELING THE LATERAL OXIDATION-ENHANCED DIFFUSION OF DOPANTS IN SILICON [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (10) : 1454 - 1462

[7] TWO-DIMENSIONAL PROCESS SIMULATION USING A QUADRATIC FINITE-ELEMENT DISCRETIZATION [J]. COMPEL-THE INTERNATIONAL JOURNAL FOR COMPUTATION AND MATHEMATICS IN ELECTRICAL AND ELECTRONIC ENGINEERING, 1984, 3 (01) : 17 - 33

[8] HECHT F, 1986, INRIA INTERNAL REPOR

[9] VLSI PROCESS MODELING - SUPREM-III [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (11) : 1438 - 1453

[10] TWO-DIMENSIONAL MODELING OF ION-IMPLANTATION WITH SPATIAL MOMENTS [J]. SOLID-STATE ELECTRONICS, 1987, 30 (04) : 445 - 455