PHOTOCONDUCTIVITY AND DENSITY OF STATES FOR AMORPHOUS GETE

[1] ELECTRICAL AND OPTICAL PROPERTIES OF AMORPHOUS VS CRYSTALLINE GETE FILMS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1969, 6 (04): : 561 - &

[2] BAHL SK, 1969, P S SEMICONDUCTOR EF

[3] BELLMAN RE, 1966, NUMERICAL INVERSION, P32

[4] BREBRICK RF, 1964, J CHEM PHYS, V41, P140

[5] AMORPHOUS VERSUS CRYSTALLINE GETE FILMS .I. GROWTH AND STRUCTURAL BEHAVIOR [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (10) : 4171 - &

[6] CHOPRA KL, 1969, B AM PHYS SOC, V14, P98

[7] CHUNHUA L, 1962, J INORG CHEM, V7, P496

[8] SIMPLE BAND MODEL FOR AMORPHOUS SEMICONDUCTING ALLOYS [J]. PHYSICAL REVIEW LETTERS, 1969, 22 (20) : 1065 - +

[9] ELECTRONIC CONDUCTION IN AS2SE3 AS2SE2TE AND SIMILAR MATERIALS [J]. BRITISH JOURNAL OF APPLIED PHYSICS, 1966, 17 (08): : 979 - &

[10] AMORPHOUS GERMANIUM AND SILICON (STRUCTURE ANDTRANSPORT PHENOMENA) [J]. MATERIALS RESEARCH BULLETIN, 1968, 3 (01) : 13 - +

[1] ELECTRICAL AND OPTICAL PROPERTIES OF AMORPHOUS VS CRYSTALLINE GETE FILMS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1969, 6 (04): : 561 - &

[2] BAHL SK, 1969, P S SEMICONDUCTOR EF

[3] BELLMAN RE, 1966, NUMERICAL INVERSION, P32

[4] BREBRICK RF, 1964, J CHEM PHYS, V41, P140

[5] AMORPHOUS VERSUS CRYSTALLINE GETE FILMS .I. GROWTH AND STRUCTURAL BEHAVIOR [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (10) : 4171 - &

[6] CHOPRA KL, 1969, B AM PHYS SOC, V14, P98

[7] CHUNHUA L, 1962, J INORG CHEM, V7, P496

[8] SIMPLE BAND MODEL FOR AMORPHOUS SEMICONDUCTING ALLOYS [J]. PHYSICAL REVIEW LETTERS, 1969, 22 (20) : 1065 - +

[9] ELECTRONIC CONDUCTION IN AS2SE3 AS2SE2TE AND SIMILAR MATERIALS [J]. BRITISH JOURNAL OF APPLIED PHYSICS, 1966, 17 (08): : 979 - &

[10] AMORPHOUS GERMANIUM AND SILICON (STRUCTURE ANDTRANSPORT PHENOMENA) [J]. MATERIALS RESEARCH BULLETIN, 1968, 3 (01) : 13 - +