SHORT-RANGE POTENTIAL VARIATIONS AT A METAL-SEMICONDUCTOR INTERFACE

被引：6

作者：

KANSKI, J ^{[1
]}

SVENSSON, SP ^{[1
]}

ANDERSSON, TG ^{[1
]}

LELAY, G ^{[1
]}

机构：

[1] CNRS,CTR RECH MECANISMES CROISSANCE CRISTALLINE,F-13288 MARSEILLE 9,FRANCE

来源：

SOLID STATE COMMUNICATIONS | 1986年 / 60卷 / 10期

关键词：

D O I：

10.1016/0038-1098(86)90598-3

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

收藏

页码：793 / 796

页数：4

相关论文

共 20 条

[1] THE FORMATION OF THE AU-GAAS(001) INTERFACE
ANDERSSON, TG
KANSKI, J
LELAY, G
SVENSSON, SP
[J]. SURFACE SCIENCE, 1986, 168 (1-3) : 301 - 308
[2] ANDREN HO, UNPUB
[3] INVESTIGATION OF INTERFACIAL REACTIONS BETWEEN THIN-FILMS OF GOLD AND SUBSTRATES OF GALLIUM-ARSENIDE BY TRANSMISSION ELECTRON-MICROSCOPY
BAUER, CL
[J]. SURFACE SCIENCE, 1986, 168 (1-3) : 395 - 403
[4] LAYER-RESOLVED SHIFTS OF PHOTOEMISSION AND AUGER-SPECTRA FROM PHYSISORBED RARE-GAS MULTILAYERS
CHIANG, TC
KAINDL, G
MANDEL, T
[J]. PHYSICAL REVIEW B, 1986, 33 (02): : 695 - 711
[5] ELECTRON-ESCAPE DEPTHS IN GERMANIUM
GANT, H
MONCH, W
[J]. SURFACE SCIENCE, 1981, 105 (01) : 217 - 224
[6] MANY-BODY EFFECTS AT METAL-SEMICONDUCTOR JUNCTIONS .2. SELF ENERGY AND BAND-STRUCTURE DISTORTION
INKSON, JC
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1973, 6 (08): : 1350 - 1362
[7] SUBSURFACE AS-LAYER FORMATION IN AU FILMS DEPOSITED ON GAAS (001)
KANSKI, J
SVENSSON, SP
ANDERSSON, TG
LELAY, G
[J]. SOLID STATE COMMUNICATIONS, 1985, 54 (04) : 339 - 342
[8] KANSKI J, 1986, 18TH P INT C PHYS SE
[9] Karlsson K. M., UNPUB
[10] MICROSCOPIC EFFECTS AT GAAS/GE(100) MOLECULAR-BEAM-EPITAXY INTERFACES - SYNCHROTRON-RADIATION PHOTOEMISSION-STUDY
KATNANI, AD
CHIARADIA, P
SANG, HW
ZURCHER, P
BAUER, RS
[J]. PHYSICAL REVIEW B, 1985, 31 (04): : 2146 - 2156