ABRUPTNESS OF INGAAS/INP HETEROINTERFACE GROWN BY LIQUID-PHASE EPITAXY

被引:2
作者
KUBO, M
SASAI, Y
YOSHIOKA, Y
OGURA, M
机构
关键词
D O I
10.1016/S0022-0248(87)80002-7
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
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页码:584 / 588
页数:5
相关论文
共 13 条
[1]   ANALYSIS OF COMPOSITIONAL VARIATION AT INITIAL TRANSIENT TIME IN LPE GROWTH OF INGAASP/GAAS SYSTEM [J].
HIRAMATSU, K ;
TANAKA, S ;
SAWAKI, N ;
AKASAKI, I .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1985, 24 (08) :1030-1035
[2]  
Hofmann S., 1980, Surface and Interface Analysis, V2, P148, DOI 10.1002/sia.740020406
[3]   LOW-TEMPERATURE LPE GROWTH AND CHARACTERIZATION OF INGAAS TERNARY ALLOYS [J].
KUBO, M ;
SASAI, Y ;
YOSHIOKA, Y ;
OGURA, M .
JOURNAL OF CRYSTAL GROWTH, 1985, 73 (03) :439-444
[4]  
KUPHAL E, 1983, J ELECTRON MATER, V12, P743, DOI 10.1007/BF02676801
[5]   PHASE-DIAGRAMS OF INGAASP, INGAAS AND INP LATTICE-MATCHED TO (100)INP [J].
KUPHAL, E .
JOURNAL OF CRYSTAL GROWTH, 1984, 67 (03) :441-457
[6]   A CAPACITANCE INVESTIGATION OF INGAAS/INP ISOTYPE HETEROJUNCTION [J].
OGURA, M ;
MIZUTA, M ;
ONAKA, K ;
KUKIMOTO, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1983, 22 (10) :1502-1509
[7]  
PANISH MB, 1972, SOLID STATE CHEM, V17, P39
[8]   EFFECT OF SUBSTRATE ORIENTATION ON THE LIQUID-SOLID DISTRIBUTION COEFFICIENTS FOR GAXIN1-XAS IN THE TEMPERATURE-RANGE 600-700-DEGREES-C [J].
PEARSALL, TP ;
QUILLEC, M ;
POLLACK, MA .
APPLIED PHYSICS LETTERS, 1979, 35 (04) :342-344
[9]  
PEARSALL TP, 1982, GAINASP ALLOY SEMICO
[10]   LATTICE-VIBRATIONS OF IN1-XGAXASYP1-Y QUATERNARY COMPOUNDS [J].
PINCZUK, A ;
WORLOCK, JM ;
NAHORY, RE ;
POLLACK, MA .
APPLIED PHYSICS LETTERS, 1978, 33 (05) :461-463