EFFECT OF SUBSTRATE ORIENTATION ON THE LIQUID-SOLID DISTRIBUTION COEFFICIENTS FOR GAXIN1-XAS IN THE TEMPERATURE-RANGE 600-700-DEGREES-C

被引：43

作者：

PEARSALL, TP

QUILLEC, M

POLLACK, MA

机构：

[1] BELL TEL LABS INC,HOLMDEL,NJ 07733

[2] CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE

来源：

APPLIED PHYSICS LETTERS | 1979年 / 35卷 / 04期

关键词：

D O I：

10.1063/1.91115

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate that the liquid-solid distribution coefficients depend on the substrate orientation in the growth from the liquid phase of Ga xIn1-xAs. The distribution coefficient of Ga for growth on the (100) face was found to be larger than that for growth on the (111B) face over the entire temperature range investigated.

引用

页码：342 / 344

页数：3

共 13 条

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STILLMAN, GE
[J]. APPLIED PHYSICS LETTERS, 1978, 32 (11) : 758 - 761
[6] HSIEH JJ, 1977, GALLIUM ARSENIDE REL, P37
[7] PHASE-DIAGRAM OF IN-GA-AS-P-QUATERNARY SYSTEM AND LPE GROWTH-CONDITIONS FOR LATTICE MATCHING ON INP SUBSTRATES
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (01) : 123 - 127
[8] ORIENTATION EFFECTS IN LPE GROWTH OF GALNASP QUATERNARY ALLOYS
OE, K
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[J]. APPLIED PHYSICS LETTERS, 1978, 33 (05) : 449 - 451
[9] Panish M.B., 1972, Prog. Solid State Chem, V7, P39
[10] GROWTH OF GAXIN1-XAS ON (100) INP BY LIQUID-PHASE EPITAXY
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BISARO, R
ANSEL, R
MERENDA, P
[J]. APPLIED PHYSICS LETTERS, 1978, 32 (08) : 497 - 499

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