ORIENTATION EFFECTS IN LPE GROWTH OF GALNASP QUATERNARY ALLOYS

被引:37
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OE, K
SUGIYAMA, K
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10.1063/1.90374
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O59 [应用物理学];
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页码:449 / 451
页数:3
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  • [1] ANTYPAS GA, 1977, 1976 S GAAS REL COMP, P96
  • [3] SMALL-AREA, HIGH-RADIANCE CW INGAASP LEDS EMITTING AT 1.2 TO 1.3 MUM
    DENTAI, AG
    LEE, TP
    BURRUS, CA
    BUEHLER, E
    [J]. ELECTRONICS LETTERS, 1977, 13 (16) : 484 - 485
  • [4] HIGH-QUANTUM-EFFICIENCY PHOTOEMISSION FROM AN INGAASP PHOTOCATHODE
    ESCHER, JS
    ANTYPAS, GA
    EDGECUMBE, J
    [J]. APPLIED PHYSICS LETTERS, 1976, 29 (03) : 153 - 155
  • [5] LIQUID-PHASE EPITAXIAL-GROWTH OF LATTICE-MATCHED INGAASP ON (100)-INP FOR 1.15-1.31-MU-M SPECTRAL REGION
    FENG, M
    WINDHORN, TH
    TASHIMA, MM
    STILLMAN, GE
    [J]. APPLIED PHYSICS LETTERS, 1978, 32 (11) : 758 - 761
  • [6] ROOM-TEMPERATURE CW OPERATION OF GALNASP-INP DOUBLE-HETEROSTRUCTURE DIODE-LASERS EMITTING AT 1.1 MU-M
    HSIEH, JJ
    ROSSI, JA
    DONNELLY, JP
    [J]. APPLIED PHYSICS LETTERS, 1976, 28 (12) : 709 - 711
  • [7] HSIEH JJ, 1977, 1976 S GAAS REL COMP, P37
  • [8] PHASE-DIAGRAM OF SYSTEM AL-GA-P
    ILEGEMS, M
    PANISH, MB
    [J]. JOURNAL OF CRYSTAL GROWTH, 1973, 20 (02) : 77 - 81
  • [9] PHOTOEMISSION FROM CESIUM-OXIDE-ACTIVATED IN GAASP
    JAMES, LW
    ANTYPAS, GA
    MOON, RL
    EDGECUMBE, J
    BELL, RL
    [J]. APPLIED PHYSICS LETTERS, 1973, 22 (06) : 270 - 271
  • [10] BANDGAP AND LATTICE-CONSTANT OF GAINASP AS A FUNCTION OF ALLOY COMPOSITION
    MOON, RL
    ANTYPAS, GA
    JAMES, LW
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 1974, 3 (03) : 635 - 644