THERMAL-EXPANSION PARAMETERS OF SOME GAXIN1-XASYP1-X ALLOYS

被引：75

作者：

BISARO, R

MERENDA, P

PEARSALL, TP

机构：

[1] Laboratoire Central de Recherches, Thomson-C.S.F

来源：

APPLIED PHYSICS LETTERS | 1979年 / 34卷 / 01期

关键词：

D O I：

10.1063/1.90575

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The coefficient of thermal expansion has been determined in the temperature range 25-400°C for InP, the ternary alloy Ga0.47In 0.53As, and the quaternary alloy Ga0.26In 0.74As0.40P0.60 grown on (100) InP by liquid-phase epitaxy. This parameter is (4.56±0.10) ×10 -6/°C for InP, (5.42±0.10) ×10-6/°C for Ga0.26In0.74As0.60P0.40, and (5.66±0.10) ×10-6/°C for Ga0.47In 0.53As.

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页码：100 / 102

页数：3

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