MACROSCOPIC DETERIORATION OF FLUORESCENCE FROM ALCHIGA1-CHIAS-GAAS DH MATERIAL FOLLOWING MICROSCOPIC PHYSICAL DAMAGE

被引：24

作者：

JOHNSTON, WD ^{[1
]}

机构：

[1] BELL TEL LABS INC, HOLMDEL, NJ 07733 USA

来源：

APPLIED PHYSICS LETTERS | 1974年 / 24卷 / 10期

关键词：

D O I：

10.1063/1.1655026

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：494 / 496

页数：3

共 13 条

[1] DEGRADATION OF CW GAAS DOUBLE-HETEROJUNCTION LASERS AT 300-K
DELOACH, BC
HAKKI, BW
HARTMAN, RL
DASARO, LA
[J]. PROCEEDINGS OF THE IEEE, 1973, 61 (07) : 1042 - 1044
[2] Electrical properties of the GaAs X-1C minima at low electric fields from a high-pressure experiment
Fitt, G. D.
Lees, J.
[J]. PHYSICAL REVIEW B-SOLID STATE, 1970, 2 (10): : 4144 - 4160
[3] STRAIN-INDUCED DEGRADATION OF GAAS INJECTION LASERS
HARTMAN, RL
HARTMAN, AR
[J]. APPLIED PHYSICS LETTERS, 1973, 23 (03) : 147 - 149
[4] SIMPLE METHOD FOR OBTAINING LUMINESCENT PATTERN OF DOUBLE HETEROSTRUCTURE CRYSTALS
ITO, R
NAKASHIMA, H
NAKADA, O
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1973, 12 (08) : 1272 - 1274
[5] DEGRADATION CHARACTERISTICS OF CW OPTICALLY PUMPED ALXGA1-XAS HETEROSTRUCTURE LASERS
JOHNSTON, WD
MILLER, BI
[J]. APPLIED PHYSICS LETTERS, 1973, 23 (04) : 192 - 194
[6] OBSERVATION OF DARK-LINE DEGRADATION SITES IN ALGAAS-GAAS DH LASER MATERIAL BY ETCHING AND PHASE-CONTRAST MICROSCOPY
JOHNSTON, WD
CALLAHAN, WM
MILLER, BI
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (02) : 505 - 507
[7] ANODIC-OXIDATION OF GAAS IN AQUEOUS H2O2 SOLUTION
LOGAN, RA
SCHWARTZ, B
SUNDBURG, WJ
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (10) : 1385 - 1390
[8] REPRODUCIBLE LIQUID-PHASE-EPITAXIAL GROWTH OF DOUBLE HETEROSTRUCTURE GAAS-ALXGA1-XAS LASER-DIODES
MILLER, BI
CAPIK, RJ
HAYASHI, I
PINKAS, E
[J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (06) : 2817 - &
[9] NAKADA O, 1973, P INT C SOLID STATE
[10] NEUBERGER M, 1971, HDB ELECTRONIC MATER, V2

← 1 2 →