ELECTRICAL AND OPTICAL-PROPERTIES OF CHALCOGENIDE AMORPHOUS-SEMICONDUCTORS MODIFIED WITH NI

被引：26

作者：

GOMI, T

HIROSE, Y

KUROSU, T

SHIRAISHI, T

IIDA, M

GEKKA, Y

KUNIOKA, A

机构：

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1980年 / 41卷 / 01期

关键词：

D O I：

10.1016/0022-3093(80)90189-1

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：37 / 46

页数：10

共 8 条

[1] IMPURITY EFFECTS IN AMORPHOUS-GERMANIUM AND SILICON [J].

ALZAMIR, J ;

COLLVER, MM .

SOLID STATE COMMUNICATIONS, 1979, 30 (07) :425-428

[2]

FLASCK R, 1977, 7TH P INT C AM LIQ S, P524

[3] VALENCE-ALTERNATION MODEL FOR LOCALIZED GAP STATES IN LONE-PAIR SEMICONDUCTORS [J].

KASTNER, M ;

ADLER, D ;

FRITZSCHE, H .

PHYSICAL REVIEW LETTERS, 1976, 37 (22) :1504-1507

[4] ESR STUDY OF STRUCTURAL-CHANGES IN CHALCOGENIDE GLASSES [J].

KUMEDA, M ;

NAKAGAKI, Y ;

SUZUKI, M ;

SHIMIZU, T .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1978, 29 (01) :15-27

[5] ORIGIN OF SOME IDEAS ON NON-CRYSTALLINE MATERIALS [J].

MOTT, NF .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1978, 28 (02) :147-158

[6] INCREASE IN CONDUCTIVITY OF CHALCOGENIDE GLASSES BY ADDITION OF CERTAIN IMPURITIES [J].

MOTT, NF .

PHILOSOPHICAL MAGAZINE, 1976, 34 (06) :1101-1108

[7]

MOTT NF, 1971, ELECTRONIC PROCESSES

[8] STATES IN GAP IN GLASSY SEMICONDUCTORS [J].

STREET, RA ;

MOTT, NF .

PHYSICAL REVIEW LETTERS, 1975, 35 (19) :1293-1296

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