IMPURITY EFFECTS IN AMORPHOUS-GERMANIUM AND SILICON

被引：4

作者：

ALZAMIR, J

COLLVER, MM

机构：

[1] Instituto de Física Gleb Wataghin, 13100 Campinas, São Paulo

来源：

SOLID STATE COMMUNICATIONS | 1979年 / 30卷 / 07期

关键词：

D O I：

10.1016/0038-1098(79)91180-3

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A systematic study of the hoping conductivity of amorphous germanium-transition metal (Cr, Co, Fe) films reveals an exponential decrease of the hopping parameter, To, as a function of the transition metal concentration. A similar, but often unnoticed, behavior is found in the literature. A linear decrease in the energy gap as a function of concentration is postulated as an explanation. © 1979.

引用

页码：425 / 428

页数：4

共 20 条

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[J]. SOLID STATE COMMUNICATIONS, 1972, 11 (01) : 131 - +
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[8] ELECTRICAL PROPERTIES OF AMORPHOUS-GE ALLOYS AND ELECTRON TUNNELING IN AMORPHOUS-SEMICONDUCTORS
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[J]. PHYSICAL REVIEW B, 1974, 9 (06): : 2544 - 2557
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[10] METAL-NONMETAL TRANSITION IN AMORPHOUS SI-AU SYSTEM AT LOW-TEMPERATURES
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[J]. SOLID STATE COMMUNICATIONS, 1976, 20 (01) : 31 - 34

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