METASTABLE IMPURITY BANDS - CONDUCTION IN SI1-XCOX AND SI1-XNIX ALLOY-FILMS

[1] SEMICONDUCTOR-TO-METAL TRANSITION IN N-TYPE GROUP 4 SEMICONDUCTORS [J]. REVIEWS OF MODERN PHYSICS, 1968, 40 (04) : 815 - +

[2] ELECTRICAL-CONDUCTION IN HEAVILY DOPED GERMANIUM [J]. PHILOSOPHICAL MAGAZINE, 1972, 26 (04): : 1027 - &

[3] AMBEGAOKAR V, 1974, PHYS REV B, V4, P2619

[4] METAL TO NONMETAL TRANSITIONS IN DOPED GERMANIUM AND SILICON [J]. PHILOSOPHICAL MAGAZINE, 1973, 27 (05): : 1027 - 1040

[5] DIELECTRIC ANOMALY AND METAL-INSULATOR TRANSITION IN N-TYPE SILICON [J]. PHYSICAL REVIEW LETTERS, 1975, 34 (26) : 1627 - 1630

[6] CONDUCTION IN NON-CRYSTALLINE MATERIALS .3. LOCALIZED STATES IN A PSEUDOGAP AND NEAR EXTREMITIES OF CONDUCTION AND VALENCE BANDS [J]. PHILOSOPHICAL MAGAZINE, 1969, 19 (160): : 835 - &

[7] SZE SM, 1969, PHYSICS SEMICONDUCTO, P30

[8] PHONON-ASSISTED TRANSITIONS TO A TEMPERATURE-INDEPENDENT DEEP LEVEL IN CO-SI [J]. APPLIED PHYSICS LETTERS, 1974, 25 (08) : 466 - 467

[9] WONG DC, 1975, APPL PHYS LETT, V28, P142

[1] SEMICONDUCTOR-TO-METAL TRANSITION IN N-TYPE GROUP 4 SEMICONDUCTORS [J]. REVIEWS OF MODERN PHYSICS, 1968, 40 (04) : 815 - +

[2] ELECTRICAL-CONDUCTION IN HEAVILY DOPED GERMANIUM [J]. PHILOSOPHICAL MAGAZINE, 1972, 26 (04): : 1027 - &

[3] AMBEGAOKAR V, 1974, PHYS REV B, V4, P2619

[4] METAL TO NONMETAL TRANSITIONS IN DOPED GERMANIUM AND SILICON [J]. PHILOSOPHICAL MAGAZINE, 1973, 27 (05): : 1027 - 1040

[5] DIELECTRIC ANOMALY AND METAL-INSULATOR TRANSITION IN N-TYPE SILICON [J]. PHYSICAL REVIEW LETTERS, 1975, 34 (26) : 1627 - 1630

[6] CONDUCTION IN NON-CRYSTALLINE MATERIALS .3. LOCALIZED STATES IN A PSEUDOGAP AND NEAR EXTREMITIES OF CONDUCTION AND VALENCE BANDS [J]. PHILOSOPHICAL MAGAZINE, 1969, 19 (160): : 835 - &

[7] SZE SM, 1969, PHYSICS SEMICONDUCTO, P30

[8] PHONON-ASSISTED TRANSITIONS TO A TEMPERATURE-INDEPENDENT DEEP LEVEL IN CO-SI [J]. APPLIED PHYSICS LETTERS, 1974, 25 (08) : 466 - 467

[9] WONG DC, 1975, APPL PHYS LETT, V28, P142