PHONON-ASSISTED TRANSITIONS TO A TEMPERATURE-INDEPENDENT DEEP LEVEL IN CO-SI

[1] EXCITED IMPURITY STATES AND TRANSIENT PHOTOCONDUCTIVITY IN COBALT-DOPED SILICON [J]. PHYSICAL REVIEW B, 1971, 4 (04): : 1229 - &

[2] DOUBLE INJECTION DIODES AND RELATED DI PHENOMENA IN SEMICONDUCTORS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1962, 50 (12): : 2421 - &

[3] MOORE JS, 1970, J APPL PHYS, V41, P528

[4] Pankove J. I., 1975, Optical process in semiconductors

[5] PARRILLO LC, 1972, APPL PHYS LETT, V20, P104, DOI 10.1063/1.1654066

[6] PENCHINA CM, TO BE PUBLISHED

[7] VANVECHT.JA, 1974, B AM PHYS SOC, V19, P211

[8] VANVECHTEN JA, UNPUBLISHED

[1] EXCITED IMPURITY STATES AND TRANSIENT PHOTOCONDUCTIVITY IN COBALT-DOPED SILICON [J]. PHYSICAL REVIEW B, 1971, 4 (04): : 1229 - &

[2] DOUBLE INJECTION DIODES AND RELATED DI PHENOMENA IN SEMICONDUCTORS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1962, 50 (12): : 2421 - &

[3] MOORE JS, 1970, J APPL PHYS, V41, P528

[4] Pankove J. I., 1975, Optical process in semiconductors

[5] PARRILLO LC, 1972, APPL PHYS LETT, V20, P104, DOI 10.1063/1.1654066

[6] PENCHINA CM, TO BE PUBLISHED

[7] VANVECHT.JA, 1974, B AM PHYS SOC, V19, P211

[8] VANVECHTEN JA, UNPUBLISHED