APPLICATION OF INFRARED LUMINESCENCE MICROSCOPY FOR ION-BEAM DIAGNOSTICS AND FOR MEASUREMENT OF ION DOSE DENSITIES FROM 10(9) TO 10(16) CM-2

Ion-bombardment-induced damage in the surface region of the (single-crystal) III-IV semiconductors GaAs and InP was investigated by (light-stimulated) infrared luminescence microscopy (IRLM). The loss of observable luminescence associated with the crystal damage was measured as a function of ion dose density. Detection limits of defect levels in non-doped InP were found to correspond to ion dose densities as low as 10(9) cm-2 (for ion energies of several keV). Detection limits for the GaAs material investigated was an order of magnitude higher. Here, results are reported mainly on the relationship between luminescence loss on GaAs and dose densities up to 10(16) cm-2 of both oxygen (12 keV O2+) and argon (10.4 keV Ar+). It is concluded that prospects are good for the application of IRLM in ion dosimetry. The high lateral resolution of 2-3-mu-m allows the technique to be applied also for beam diagnostic purposes in a variety of ion beam instruments.