A PHOTOLUMINESCENCE METHOD OF MAPPING DOSE UNIFORMITY IN GAAS SUBSTRATES

被引：1

作者：

POWELL, RA

FELCH, SB

KIRILLOV, D

BIVAS, A

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1989年 / 37-8卷

关键词：

D O I：

10.1016/0168-583X(89)90199-7

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：339 / 343

页数：5

共 10 条

[1]

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[6] DEGRADATION OF PHOTOLUMINESCENCE INTENSITY CAUSED BY EXCITATION-ENHANCED OXIDATION OF GAAS SURFACES [J].

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OGAWA, M .

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[7] DAMAGE ASSESSMENT IN LOW-DOSE SI-IMPLANTED GAAS BY RAMAN-SPECTROSCOPY [J].

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[8]

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[9]

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[10]

1987, GAAS 4 POINT PROBE D

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