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DEGRADATION OF BAND-GAP PHOTOLUMINESCENCE IN GAAS

被引：30
作者：
GUIDOTTI, D
HASAN, E
HOVEL, HJ
ALBERT, M
机构：
来源：
APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 14期
关键词：
D O I：
10.1063/1.98030
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：912 / 914
页数：3
相关论文
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[2]   CORRELATIONS OF PHOTOLUMINESCENCE WITH DEFECT DENSITIES IN SEMI-INSULATING GALLIUM-ARSENIDE [J].
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IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (11) :2331-2338
[3]  
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[4]  
NAKANO Y, 1979, JPN J APPL PHYS, V18, P1863, DOI 10.1143/JJAP.18.1863
[5]   DEGRADATION OF PHOTOLUMINESCENCE INTENSITY CAUSED BY EXCITATION-ENHANCED OXIDATION OF GAAS SURFACES [J].
SUZUKI, T ;
OGAWA, M .
APPLIED PHYSICS LETTERS, 1977, 31 (07) :473-475
[6]   ORIGIN OF CW-LASER GENERATED HIGH-EFFICIENCY ALGAAS MICROSTRUCTURES [J].
VANVECHTEN, JA .
PHYSICA B & C, 1983, 116 (1-3) :575-582
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