CORRELATIONS OF PHOTOLUMINESCENCE WITH DEFECT DENSITIES IN SEMI-INSULATING GALLIUM-ARSENIDE

被引：63

作者：

HOVEL, HJ

GUIDOTTI, D

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1985年 / 32卷 / 11期

关键词：

D O I：

10.1109/T-ED.1985.22279

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：2331 / 2338

页数：8

相关论文

共 20 条

[1] BEBB HB, 1972, SEMICONDUCTORS SEMIM, V8
[2] PHOTO-LUMINESCENCE AT DISLOCATIONS IN GAAS AND INP
BOHM, K
FISCHER, B
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (08) : 5453 - 5460
[3] BUBE RH, 1960, PHOTOCONDUCTIVITY SO, pCH10
[4] INVESTIGATION OF INHOMOGENEITIES IN GAAS BY ELECTRON-BEAM EXCITATION
CASEY, HC
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (2P1) : 153 - +
[5] SPATIALLY RESOLVED CATHODOLUMINESCENCE STUDY OF SEMI-INSULATING GAAS SUBSTRATES
CHIN, AK
VONNEIDA, AR
CARUSO, R
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (10) : 2386 - 2388
[6] DUMKE WP, COMMUNICATION
[7] GUIDOTTI D, UNPUB J APPL PHYS
[8] JONSCHER AK, 1960, PRINCIPLES SEMICONDU, pCH2
[9] ONE-DIMENSIONAL PHOTO-LUMINESCENCE DISTRIBUTION IN SEMI-INSULATING GAAS GROWN BY CZ AND HB METHODS
KITAHARA, K
NAKAI, K
SHIBATOMI, S
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (04) : 880 - 883
[10] KITAHARA K, 1983, FUJITSU SCI TECH J, V19, P279