GAAS SURFACE OXIDATION-RELATED PHOTO-LUMINESCENCE TRANSIENTS

被引：11

作者：

BOOYENS, H

BASSON, JH

LEITCH, AWR

LEE, ME

STANDER, CM

机构：

来源：

SURFACE SCIENCE | 1983年 / 130卷 / 02期

关键词：

D O I：

10.1016/0039-6028(83)90360-6

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：259 / 268

页数：10

共 20 条

[1]

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[2]

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[7]

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SPICER, WE .

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[9] ELECTRONIC SURFACE PROPERTIES OF 3-5 SEMICONDUCTORS - EXCITONIC EFFECTS, BAND-BENDING EFFECTS, AND INTERACTIONS WITH AU AND O ADSORBATE LAYERS [J].

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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (04) :831-837

[10] GAS-ADSORPTION ON CLEAVED GAAS(110) SURFACES STUDIED BY SURFACE PHOTO-VOLTAGE SPECTROSCOPY [J].

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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1200-1206

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