PHOTOEMISSION STUDY OF SURFACE STATES OF (110) GAAS SURFACE

被引：50

作者：

GREGORY, PE ^{[1
]}

SPICER, WE ^{[1
]}

机构：

[1] STANFORD UNIV,ELECT ENGN,STANFORD,CA 94305

来源：

PHYSICAL REVIEW B | 1976年 / 13卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.13.725

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：725 / 738

页数：14

共 45 条

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[3] SURFACE STATES OF (110) SURFACE OF GAAS
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[10] PHOTOEMISSION PARTIAL YIELD MEASUREMENTS OF UNOCCUPIED INTRINSIC SURFACE STATES FOR GE(111) AND GAAS(110)
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