DAMAGE ASSESSMENT IN LOW-DOSE SI-IMPLANTED GAAS BY RAMAN-SPECTROSCOPY

被引：20

作者：

WAGNER, J

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 14期

关键词：

D O I：

10.1063/1.99191

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1158 / 1160

页数：3

共 19 条

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