ELECTRICAL ACTIVATION AND LOCAL VIBRATIONAL-MODE FROM SI-IMPLANTED GAAS

被引：33

作者：

NAKAMURA, T ^{[1
]}

KATODA, T ^{[1
]}

机构：

[1] UNIV TOKYO,FAC ENGN,INST INTERDISCIPLINARY RES,MEGURO KU,TOKYO 153,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 57卷 / 04期

关键词：

D O I：

10.1063/1.334550

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1084 / 1088

页数：5

共 15 条

[1] LIGHT-SCATTERING FROM LASER ANNEALED ION-IMPLANTED SEMICONDUCTORS [J].

BALKANSKI, M ;

MORHANGE, JF ;

KANELLIS, G .

JOURNAL OF RAMAN SPECTROSCOPY, 1981, 10 (JAN) :240-245

[2] SI IMPLANTATION IN GAAS [J].

BHATTACHARYA, RS ;

RAI, AK ;

YEO, YK ;

PRONKO, PP ;

LING, SC ;

WILSON, SR ;

PARK, YS .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (05) :2329-2337

[3] INFRARED-ABSORPTION BANDS INDUCED BY SI-RELATED DEFECTS IN GAAS - ABSORPTION CROSS-SECTIONS [J].

CHEN, RT ;

RANA, V ;

SPITZER, WG .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (03) :1532-1538

[4] REDISTRIBUTION OF CR DURING ANNEALING OF SE-80-IMPLANTED GAAS [J].

EVANS, CA ;

DELINE, VR ;

SIGMON, TW ;

LIDOW, A .

APPLIED PHYSICS LETTERS, 1979, 35 (03) :291-293

[5]

KASAHARA J, 1982, 2ND P SEM 3 5 MAT C, P238

[6] LOCAL MODE ABSORPTION IN COMPENSATED SILICON-DOPED GALLIUM ARSENIDE [J].

LORIMOR, OG ;

SPITZER, WG .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (10) :3687-+

[7]

MASUYAMA A, 1980, APPL PHYS LETT, V33, P749

[8] RAMAN-SPECTRA FROM SI AND SN IMPLANTED GAAS [J].

NAKAMURA, T ;

KATODA, T .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (08) :5870-5872

[9] 2-PHONON RAMAN-SCATTERING IN GAAS [J].

SEKINE, T ;

UCHINOKURA, K ;

MATSUURA, E .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1977, 38 (09) :1091-1096

[10] LOCALIZED VIBRATIONAL MODE ABSORPTION OF ION-IMPLANTED SILICON IN GAAS [J].

SKOLNIK, LH ;

SPITZER, WG ;

EULER, F ;

HUNSPERG.RG ;

KAHAN, A .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (05) :2146-&

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