INFRARED-ABSORPTION BANDS INDUCED BY SI-RELATED DEFECTS IN GAAS - ABSORPTION CROSS-SECTIONS

被引：32

作者：

CHEN, RT ^{[1
]}

RANA, V ^{[1
]}

SPITZER, WG ^{[1
]}

机构：

[1] UNIV SO CALIF,DEPT MAT SCI,LOS ANGELES,CA 90007

来源：

JOURNAL OF APPLIED PHYSICS | 1980年 / 51卷 / 03期

关键词：

D O I：

10.1063/1.327805

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1532 / 1538

页数：7

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