RAMAN-SCATTERING STUDIES OF SILICON-IMPLANTED GALLIUM-ARSENIDE - THE ROLE OF AMORPHICITY

被引：48

作者：

HOLTZ, M ^{[1
]}

ZALLEN, R ^{[1
]}

GEISSBERGER, AE ^{[1
]}

SADLER, RA ^{[1
]}

机构：

[1] ITT CORP,CTR GALLIUM ARSENIDE TECHNOL,ROANOKE,VA 24019

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 59卷 / 06期

关键词：

D O I：

10.1063/1.336423

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

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页码：1946 / 1951

页数：6

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