ABSOLUTE CROSS-SECTION OF 1ST-ORDER RAMAN-SCATTERING IN GAAS

被引：42

作者：

GRIMSDITCH, MH

OLEGO, D

CARDONA, M

机构：

[1] Max-Planck-Institut für Festkörperforschung

来源：

PHYSICAL REVIEW B | 1979年 / 20卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.20.1758

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have complemented previous measurements of the dispersion of the relative cross section for first-order Raman scattering in GaAs by determining the corresponding absolute cross section. The results are fitted with a theory based on a simple band-structure model. Values obtained for the deformation-potential constants of the E0 and E1 gaps corresponding to TO phonons are in excellent agreement with theoretical calculations. © 1979 The American Physical Society.

引用

页码：1758 / 1761

页数：4

共 23 条

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