SPECTROSCOPIC ELLIPSOMETRY AND RAMAN-SCATTERING STUDY OF THE ANNEALING BEHAVIOR OF BE-IMPLANTED GAAS

被引：13

作者：

CHAMBON, P ^{[1
]}

ERMAN, M ^{[1
]}

THEETEN, JB ^{[1
]}

PREVOT, B ^{[1
]}

SCHWAB, C ^{[1
]}

机构：

[1] UNIV STRASBOURG 1,CNRS,SPECTROSCOPIE & OPT CORPS SOLIDE LAB 232,F-67084 STRASBOURG,FRANCE

来源：

APPLIED PHYSICS LETTERS | 1984年 / 45卷 / 04期

关键词：

D O I：

10.1063/1.95231

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：390 / 392

页数：3

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