1ST-ORDER RAMAN LINE INTENSITY RATIO IN GAAS - A POTENTIAL LATTICE PERFECTION SCALE

被引:44
作者
BIELLMANN, J
PREVOT, B
SCHWAB, C
机构
来源
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1983年 / 16卷 / 06期
关键词
D O I
10.1088/0022-3719/16/6/019
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:1135 / 1142
页数:8
相关论文
共 13 条
[1]   RAMAN-SPECTROSCOPY - VERSATILE TOOL FOR CHARACTERIZATION OF THIN-FILMS AND HETEROSTRUCTURES OF GAAS AND ALXGA1-XAS [J].
ABSTREITER, G ;
BAUSER, E ;
FISCHER, A ;
PLOOG, K .
APPLIED PHYSICS, 1978, 16 (04) :345-352
[2]   ABSORPTION SPECTRUM OF GERMANIUM AND ZINC-BLENDE-TYPE MATERIALS AT ENERGIES HIGHER THAN FUNDAMENTAL ABSORPTION EDGE [J].
CARDONA, M ;
HARBEKE, G .
JOURNAL OF APPLIED PHYSICS, 1963, 34 (04) :813-&
[3]  
Cardona M, 1982, LIGHT SCATTERING SOL
[4]   RAMAN-SCATTERING FROM BORON-IMPLANTED LASER-ANNEALED SILICON [J].
ENGSTROM, H ;
BATES, JB .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (04) :2921-2925
[5]  
ERMAN M, 1982, THESIS ORSAY U
[6]   ABSOLUTE CROSS-SECTION OF 1ST-ORDER RAMAN-SCATTERING IN GAAS [J].
GRIMSDITCH, MH ;
OLEGO, D ;
CARDONA, M .
PHYSICAL REVIEW B, 1979, 20 (04) :1758-1761
[7]  
Hayes W., 1978, SCATTERING LIGHT CRY
[8]   CONTRIBUTIONS TO OPTICAL NONLINEARITY IN GAAS AS DETERMINED FROM RAMAN SCATTERING EFFICIENCIES [J].
JOHNSTON, WD ;
KAMINOW, IP .
PHYSICAL REVIEW, 1969, 188 (03) :1209-&
[9]   OBSERVATION OF THE AMORPHOUS-TO-CRYSTALLINE TRANSITION IN SILICON BY RAMAN-SCATTERING [J].
KAMIYA, T ;
KISHI, M ;
USHIROKAWA, A ;
KATODA, T .
APPLIED PHYSICS LETTERS, 1981, 38 (05) :377-379
[10]  
KLEIN MV, 1975, LIGHT SCATTERING SOL, P158