STUDY OF ION-IMPLANTATION DAMAGE IN GAAS-BE AND INP-BE USING RAMAN-SCATTERING

被引：80

作者：

RAO, CSR ^{[1
]}

SUNDARAM, S ^{[1
]}

SCHMIDT, RL ^{[1
]}

COMAS, J ^{[1
]}

机构：

[1] USN,RES LAB,WASHINGTON,DC 20375

来源：

关键词：

D O I：

10.1063/1.332815

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1808 / 1815

页数：8

共 41 条

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