MICROSCOPIC MANIPULATION OF HOMOJUNCTION BAND LINEUPS

被引：27

作者：

MARSI, M

LAROSA, S

HWU, Y

GOZZO, F

COLUZZA, C

BALDERESCHI, A

MARGARITONDO, G

MCKINLEY, JT

BARONI, S

RESTA, R

机构：

[1] ECOLE POLYTECH FED LAUSANNE, PH ECUBLENS, INST PHYS APPL, CH-1015 LAUSANNE, SWITZERLAND

[2] FORSCHUNGSZENTRUM JULICH, FORSCHUNGSZENTRUM, INST THIN FILM & ION TECHNOL, W-5170 JULICH 1, GERMANY

[3] SCUOLA INT SUPER STUDI AVANZATI, I-34014 TRIESTE, ITALY

来源：

JOURNAL OF APPLIED PHYSICS | 1992年 / 71卷 / 04期

关键词：

D O I：

10.1063/1.351152

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We tested the theoretical prediction that the band structures on the opposite sides of a homojunction can be artificially displaced in energy with respect to each other by means of double intralayers of atomiclike thickness, producing band discontinuities of potential interest for practical applications. Evidence of such discontinuities was found when Ga-As, Al-As, Ga-P, or Al-P intralayers were inserted between Si and Si or Ge and Ge.

引用

页码：2048 / 2050

页数：3

共 10 条

[1]

BARONI S, 1989, NATO ADV SCI I B-PHY, V206, P251

[2]

BARONI S, UNPUB

[3]

BARONI S, 1988, 19TH P INT C PHYS SE, P525

[4]

Capasso F., 1987, HETEROJUNCTION BAND

[5] POLAR HETEROJUNCTION INTERFACES [J].

HARRISON, WA ;

KRAUT, EA ;

WALDROP, JR ;

GRANT, RW .

PHYSICAL REVIEW B, 1978, 18 (08) :4402-4410

[6] CONTROL OF GE HOMOJUNCTION BAND OFFSETS VIA ULTRATHIN GA-AS DIPOLE LAYERS [J].

MCKINLEY, JT ;

HWU, Y ;

KOLTENBAH, BEC ;

MARGARITONDO, G ;

BARONI, S ;

RESTA, R .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1991, 9 (03) :917-921

[7] HETEROJUNCTION BAND DISCONTINUITY CONTROL BY ULTRATHIN INTRALAYERS [J].

NILES, DW ;

MARGARITONDO, G ;

PERFETTI, P ;

QUARESIMA, C ;

CAPOZI, M .

APPLIED PHYSICS LETTERS, 1985, 47 (10) :1092-1094

[8]

NILES DW, 1988, THESIS U WISCONSIN M

[9] DIPOLE-INDUCED CHANGES OF THE BAND DISCONTINUITIES AT THE SIO2-SI INTERFACE [J].

PERFETTI, P ;

QUARESIMA, C ;

COLUZZA, C ;

FORTUNATO, C ;

MARGARITONDO, G .

PHYSICAL REVIEW LETTERS, 1986, 57 (16) :2065-2068

[10] TUNING ALAS-GAAS BAND DISCONTINUITIES AND THE ROLE OF SI-INDUCED LOCAL INTERFACE DIPOLES [J].

SORBA, L ;

BRATINA, G ;

CECCONE, G ;

ANTONINI, A ;

WALKER, JF ;

MICOVIC, M ;

FRANCIOSI, A .

PHYSICAL REVIEW B, 1991, 43 (03) :2450-2453

← 1 →