CHARACTERIZATION OF HOMOEPITAXIAL DIAMOND FILMS GROWN FROM CARBON-MONOXIDE

被引：19

作者：

MORI, Y

YAGI, H

DEGUCHI, M

SOGI, T

YOKOTA, Y

EIMORI, N

YAGYU, H

OHNISHI, H

KITABATAKE, M

NISHIMURA, K

HATTA, A

ITO, T

HIRAO, T

SASAKI, T

HIRAKI, A

机构：

[1] OSAKA GAS CO LTD,FUNDAMENTAL RES LABS,KONOHANA KU,OSAKA 554,JAPAN

[2] OSAKA DIAMOND IND CO LTD,SAKAI,OSAKA 593,JAPAN

[3] MATSUSHITA ELECT IND CO LTD,CENT RES LABS,MORIGUCHI,OSAKA 570,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷 / 10期

关键词：

HOMOEPITAXIAL DIAMOND FILM; CARBON MONOXIDE; SEM; AFM; RHEED; HALL MOBILITY; MAGNETORESISTANCE; CATHODOLUMINESCENCE; SUBSTRATE ORIENTATION;

D O I：

10.1143/JJAP.32.4661

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The crystallinities and electrical properties of homoepitaxial diamond films grown from carbon monoxide have been investigated. The films were grown on high-pressure synthesized diamond (100) and (111) substrates by microwave plasma chemical vapor deposition, and were characterized by means of atomic force microscopy, reflection high-energy electron diffraction, cathodoluminescence, secondary electron microscopy and Hall eff ect measurement. The (100) films were smooth, whereas films grown on the (111) substrate became rough. The boron-doped (100) film also exhibited Hall mobility of 451 cm2/Vs.

引用

页码：4661 / 4668

页数：8

共 22 条

[1]

BACKMANN PK, 1991, DIAM RELAT MATER, V1, P1

[2] GROWTH-KINETICS OF (100), (110), AND (111) HOMOEPITAXIAL DIAMOND FILMS [J].