ELECTRONIC-STRUCTURE OF (110) GE-GAAS SUPER-LATTICES AND INTERFACES

被引:20
作者
HERMAN, F [1 ]
KASOWSKI, RV [1 ]
机构
[1] DUPONT CO,DEPT CENT RES & DEV,WILMINGTON,DE 19898
来源
PHYSICAL REVIEW B | 1978年 / 17卷 / 02期
关键词
D O I
10.1103/PhysRevB.17.672
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:672 / 674
页数:3
相关论文
共 22 条
[1]   ELECTRONIC STATES AS LINEAR COMBINATIONS OF MUFFIN-TIN ORBITALS [J].
ANDERSEN, OK ;
KASOWSKI, RV .
PHYSICAL REVIEW B, 1971, 4 (04) :1064-&
[2]   LINEAR METHODS IN BAND THEORY [J].
ANDERSEN, OK .
PHYSICAL REVIEW B, 1975, 12 (08) :3060-3083
[3]   MUFFIN-TIN ORBITALS AND MOLECULAR CALCULATIONS - GENERAL FORMALISM [J].
ANDERSEN, OK ;
WOOLLEY, RG .
MOLECULAR PHYSICS, 1973, 26 (04) :905-927
[4]   SELF-CONSISTENT CALCULATION OF ELECTRONIC-STRUCTURE AT AN ABRUPT GAAS-GE INTERFACE [J].
BARAFF, GA ;
APPELBAUM, JA ;
HAMANN, DR .
PHYSICAL REVIEW LETTERS, 1977, 38 (05) :237-240
[5]   DIRECT OBSERVATION OF SUPERLATTICE FORMATION IN A SEMICONDUCTOR HETEROSTRUCTURE [J].
DINGLE, R ;
GOSSARD, AC ;
WIEGMANN, W .
PHYSICAL REVIEW LETTERS, 1975, 34 (21) :1327-1330
[6]  
Dingle R, 1975, FESTKORPERPROBLEME, V15, P21
[7]   THE INTERFACE TRANSPORT PROPERTIES OF GE-GAAS HETEROJUNCTIONS [J].
ESAKI, L ;
HOWARD, WE ;
HEER, J .
SURFACE SCIENCE, 1964, 2 :127-135
[8]   SUPERLATTICE AND NEGATIVE DIFFERENTIAL CONDUCTIVITY IN SEMICONDUCTORS [J].
ESAKI, L ;
TSU, R .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (01) :61-&
[9]  
Esaki L., 1976, Critical Reviews in Solid State Sciences, V6, P195, DOI 10.1080/10408437608243555
[10]   PREDICTION OF SEMICONDUCTOR HETEROJUNCTION DISCONTINUITIES FROM BULK BAND STRUCTURES [J].
FRENSLEY, WR ;
KROEMER, H .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (04) :810-815