INFLUENCE OF LATTICE MISMATCH ON THE ELECTRICAL AND STRUCTURAL-PROPERTIES OF HGCDTE EPILAYERS

被引：3

作者：

SUGIURA, L

SHIGENAKA, K

NAKATA, F

HIRAHARA, K

机构：

[1] Research and Development Center, Toshiba Corporation, Saiwai-ku, Kawasaki, 210

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷

关键词：

II-VI COMPOUND SEMICONDUCTORS; HGCDTE; INFRARED DETECTOR; EPITAXIAL GROWTH; METALORGANIC CHEMICAL VAPOR DEPOSITION; ELECTRICAL PROPERTIES; STRUCTURAL PROPERTIES; LATTICE MISMATCH; DISLOCATIONS; IMPURITY DIFFUSION;

D O I：

10.7567/JJAPS.32S3.669

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The influence of lattice mismatch on the electrical and structural properties of HgCdTe epilayers grown on CdZnTe substrates has been investigated. A slight lattice mismatch of the order of less than +/-0.1% between the epilayer and the substrate brings about a conductivity-type conversion of HgCdTe layers, which is related to the presence of misfit dislocations. It is considered that the conductivity-type conversion is caused by diffusion of impurities from the substrate to the epilayer due to the high interface dislocation density. This work emphasizes the importance of minimizing the interactions between the epilayer and its substrate by the precise lattice-matching.

引用

页码：669 / 671

页数：3

共 5 条

[1] CHARACTERIZATION OF FULLY LATTICE-MATCHED MULTILAYER ZNHGCDTE STRUCTURES GROWN BY TE-RICH LIQUID-PHASE EPITAXY [J].