CHARACTERIZATION OF FULLY LATTICE-MATCHED MULTILAYER ZNHGCDTE STRUCTURES GROWN BY TE-RICH LIQUID-PHASE EPITAXY

被引：8

作者：

CARLSON, RA

HAGER, RJ

WOOD, RA

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1987年 / 5卷 / 05期

关键词：

D O I：

10.1116/1.574213

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：3048 / 3051

页数：4

共 8 条

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[2] RECOMBINATION PROPERTIES OF LATTICE-MISMATCHED INXGA1-XP/GAAS HETEROJUNCTIONS [J].

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OLSEN, GH .

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[3]

ETTENBERG M, 1981, J APPL PHYS, V52, P6312

[4] SURFACE AND INTERFACE RECOMBINATION IN THIN-FILM HGCDTE PHOTOCONDUCTORS [J].

GRAFT, RD ;

CARLSON, FF ;

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BOYD, PR ;

LONGSHORE, RE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (03) :1696-1699

[5] 1/F NOISE IN P-N-JUNCTION DIODES [J].

KLEINPENNING, TGM .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (01) :176-182

[6] APPLICATION OF HETEROJUNCTION STRUCTURES TO OPTICAL DEVICES [J].

KRESSEL, H .

JOURNAL OF ELECTRONIC MATERIALS, 1975, 4 (05) :1081-1141

[7]

WOOD RA, 1985, AFWALTR854043 AFWALM

[8]

1985, NVEOL DAAK7082C0172

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