APPLICATION OF HETEROJUNCTION STRUCTURES TO OPTICAL DEVICES

[1] LIKE-SIGN ASYMMETRIC DISLOCATIONS IN ZINC-BLENDE STRUCTURE [J]. APPLIED PHYSICS LETTERS, 1972, 21 (05) : 185 - &

[2] INTERDEPENDENCE OF STRAIN, PRECIPITATION, AND DISLOCATION FORMATION IN EPITAXIAL SE-DOPED GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (08) : 3277 - 3287

[3] DISLOCATION MORPHOLOGY IN GRADED HETEROJUNCTIONS - GAAS1-XPX [J]. JOURNAL OF MATERIALS SCIENCE, 1969, 4 (03) : 223 - &

[4] ABRAHAMS MS, TO BE PUBLISHED

[5] ALFEROV ZI, 1971, SOV PHYS SEMICOND+, V4, P2047

[6] ALFEROV ZI, 1970, SOV PHYS SEMICOND, V3, P1107

[7] IMPROVED GAAS TRANSMISSION PHOTOCATHODE [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1972, 5 (10) : L89 - &

[8] ANDREEV VM, 1974, SOV PHYS SEMICOND, V8, P860

[9] GROWTH CHARACTERIZATION OF INP-INGAASP LATTICE-MATCHED HETEROJUNCTIONS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (11) : 1574 - 1577

[10] ELECTROREFLECTANCE SPECTRA OF ALXGA1-X AS ALLOYS [J]. CANADIAN JOURNAL OF PHYSICS, 1971, 49 (10) : 1335 - &

[1] LIKE-SIGN ASYMMETRIC DISLOCATIONS IN ZINC-BLENDE STRUCTURE [J]. APPLIED PHYSICS LETTERS, 1972, 21 (05) : 185 - &

[2] INTERDEPENDENCE OF STRAIN, PRECIPITATION, AND DISLOCATION FORMATION IN EPITAXIAL SE-DOPED GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (08) : 3277 - 3287

[3] DISLOCATION MORPHOLOGY IN GRADED HETEROJUNCTIONS - GAAS1-XPX [J]. JOURNAL OF MATERIALS SCIENCE, 1969, 4 (03) : 223 - &

[4] ABRAHAMS MS, TO BE PUBLISHED

[5] ALFEROV ZI, 1971, SOV PHYS SEMICOND+, V4, P2047

[6] ALFEROV ZI, 1970, SOV PHYS SEMICOND, V3, P1107

[7] IMPROVED GAAS TRANSMISSION PHOTOCATHODE [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1972, 5 (10) : L89 - &

[8] ANDREEV VM, 1974, SOV PHYS SEMICOND, V8, P860

[9] GROWTH CHARACTERIZATION OF INP-INGAASP LATTICE-MATCHED HETEROJUNCTIONS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (11) : 1574 - 1577

[10] ELECTROREFLECTANCE SPECTRA OF ALXGA1-X AS ALLOYS [J]. CANADIAN JOURNAL OF PHYSICS, 1971, 49 (10) : 1335 - &