APPLICATION OF HETEROJUNCTION STRUCTURES TO OPTICAL DEVICES

[31] A LOW-THRESHOLD ROOM-TEMPERATURE INJECTION LASER [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1969, QE 5 (04) : 211 - &

[32] JUNCTION LASERS WHICH OPERATE CONTINUOUSLY AT ROOM TEMPERATURE [J]. APPLIED PHYSICS LETTERS, 1970, 17 (03) : 109 - &

[33] PHOTOLUMINESCENCE AT DISLOCATION IN GAAS [J]. PHYSICAL REVIEW LETTERS, 1974, 33 (18) : 1082 - 1084

[34] MISFIT DISLOCATIONS IN SEMICONDUCTORS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1966, 27 (6-7) : 1053 - +

[35] HOVEL HJ, 1972, 1972 S GAAS, P205

[36] CATHODOLUMINESCENCE OF COMPOSITIONALLY GRADED LAYERS OF GAAS1-X PX [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (01) : 394 - 401

[37] COUPLED-WAVE THEORY OF DISTRIBUTED FEEDBACK LASERS [J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (05) : 2327 - +

[38] KRESSEL H, 1969, RCA REV, V30, P106

[39] GALLIUM-ARSENIDE AND (ALGA) AS DEVICES PREPARED BY LIQUID-PHASE EPITAXY (REVIEW ARTICLE) [J]. JOURNAL OF ELECTRONIC MATERIALS, 1974, 3 (04) : 747 - 790

[40] LUMINESCENCE DUE TO GE ACCEPTORS IN GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (09) : 4059 - +

[31] A LOW-THRESHOLD ROOM-TEMPERATURE INJECTION LASER [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1969, QE 5 (04) : 211 - &

[32] JUNCTION LASERS WHICH OPERATE CONTINUOUSLY AT ROOM TEMPERATURE [J]. APPLIED PHYSICS LETTERS, 1970, 17 (03) : 109 - &

[33] PHOTOLUMINESCENCE AT DISLOCATION IN GAAS [J]. PHYSICAL REVIEW LETTERS, 1974, 33 (18) : 1082 - 1084

[34] MISFIT DISLOCATIONS IN SEMICONDUCTORS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1966, 27 (6-7) : 1053 - +

[35] HOVEL HJ, 1972, 1972 S GAAS, P205

[36] CATHODOLUMINESCENCE OF COMPOSITIONALLY GRADED LAYERS OF GAAS1-X PX [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (01) : 394 - 401

[37] COUPLED-WAVE THEORY OF DISTRIBUTED FEEDBACK LASERS [J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (05) : 2327 - +

[38] KRESSEL H, 1969, RCA REV, V30, P106

[39] GALLIUM-ARSENIDE AND (ALGA) AS DEVICES PREPARED BY LIQUID-PHASE EPITAXY (REVIEW ARTICLE) [J]. JOURNAL OF ELECTRONIC MATERIALS, 1974, 3 (04) : 747 - 790

[40] LUMINESCENCE DUE TO GE ACCEPTORS IN GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (09) : 4059 - +