RECOMBINATION PROPERTIES OF LATTICE-MISMATCHED INXGA1-XP/GAAS HETEROJUNCTIONS

被引：21

作者：

ETTENBERG, M ^{[1
]}

OLSEN, GH ^{[1
]}

机构：

[1] RCA LABS,PRINCETON,NJ 08540

来源：

JOURNAL OF APPLIED PHYSICS | 1977年 / 48卷 / 10期

关键词：

D O I：

10.1063/1.323414

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：4275 / 4280

页数：6

相关论文

共 25 条

[1] ANTYPAS GA, 4TH P INT S GAAS, P48
[2] MELT REMOVAL AND PLANAR GROWTH OF IN-1-XGA-XP-1-XAS-Z HETEROJUNCTIONS
COLEMAN, JJ
HOLONYAK, N
LUDOWISE, MJ
[J]. APPLIED PHYSICS LETTERS, 1976, 28 (07) : 363 - 365
[3] INTERFACIAL RECOMBINATION VELOCITY DETERMINATION IN IN0.5GA0.5P-GAAS
ETTENBERG, M
NUESE, CJ
OLSEN, GH
[J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) : 1288 - 1292
[4] MINORITY-CARRIER DIFFUSION LENGTH AND RECOMBINATION LIFETIME IN GAAS-GE PREPARED BY LIQUID-PHASE EPITAXY
ETTENBERG, M
KRESSEL, H
GILBERT, SL
[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (02) : 827 - 831
[5] EFFECTS OF DISLOCATION DENSITY ON PROPERTIES OF LIQUID-PHASE EPITAXIAL GAAS
ETTENBERG, M
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (02) : 901 - 906
[6] INTERFACIAL RECOMBINATION AT (ALGA)AS-GAAS HETEROJUNCTION STRUCTURES
ETTENBERG, M
KRESSEL, H
[J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (04) : 1538 - 1544
[7] THERMAL EXPANSION OF ALAS
ETTENBERG, M
PAFF, RJ
[J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (10) : 3926 - +
[8] METALLURGICAL AND ELECTROLUMINESCENCE CHARACTERISTICS OF VAPOR-PHASE AND LIQUID-PHASE EPITAXIAL JUNCTION STRUCTURES OF INXGA1-XAS
ETTENBERG, M
NUESE, CJ
APPERT, JR
GANNON, JJ
ENSTROM, RE
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1975, 4 (01) : 37 - 66
[9] ETTENBERG M, 1973, 1972 P S GAAS, P29
[10] MISFIT DISLOCATIONS IN SEMICONDUCTORS
HOLT, DB
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1966, 27 (6-7) : 1053 - +