POSITION-SENSITIVE LIGHT DETECTORS WITH HIGH LINEARITY

[1] ALLEN DA, 1960, IRE T I, V9, P336

[2] ALLEN DA, 1962, IRE T ELECTRON DEV, VED9, P411

[3] DISTEFANO TH, 1975, 4 ARPA NBS WORKSH SU, P197

[4] LATERAL PHOTOEFFECT [J]. SOLID-STATE ELECTRONICS, 1967, 10 (05) : 505 - +

[5] EREMIN VK, 1975, SOV PHYS SEMICOND+, V9, P347

[6] EREMIN VK, 1975, SOV PHYS SEMICOND+, V9, P1038

[7] MICROINHOMOGENEITY PROBLEMS IN SILICON [J]. IEEE TRANSACTIONS ON PARTS MATERIALS AND PACKAGING, 1966, PMP2 (03): : 51 - &

[8] LABAW KB, 1970, NWCIDP3161 NAV WEAP

[9] ONE AND 2 DIMENSIONAL POSITION SENSING SEMICONDUCTOR DETECTORS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1968, NS15 (03) : 290 - &

[10] Schottky W, 1930, PHYS Z, V31, P913

[1] ALLEN DA, 1960, IRE T I, V9, P336

[2] ALLEN DA, 1962, IRE T ELECTRON DEV, VED9, P411

[3] DISTEFANO TH, 1975, 4 ARPA NBS WORKSH SU, P197

[4] LATERAL PHOTOEFFECT [J]. SOLID-STATE ELECTRONICS, 1967, 10 (05) : 505 - +

[5] EREMIN VK, 1975, SOV PHYS SEMICOND+, V9, P347

[6] EREMIN VK, 1975, SOV PHYS SEMICOND+, V9, P1038

[7] MICROINHOMOGENEITY PROBLEMS IN SILICON [J]. IEEE TRANSACTIONS ON PARTS MATERIALS AND PACKAGING, 1966, PMP2 (03): : 51 - &

[8] LABAW KB, 1970, NWCIDP3161 NAV WEAP

[9] ONE AND 2 DIMENSIONAL POSITION SENSING SEMICONDUCTOR DETECTORS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1968, NS15 (03) : 290 - &

[10] Schottky W, 1930, PHYS Z, V31, P913