MICROINHOMOGENEITY PROBLEMS IN SILICON

[1] SMALL PARTICLES IN SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (08) : 1011 - 1012

[2] METHOD OF PREPARING SI AND GE SPECIMENS FOR EXAMINATION BY TRANSMISSION ELECTRON MICROSCOPY [J]. BRITISH JOURNAL OF APPLIED PHYSICS, 1962, 13 (09): : 446 - &

[3] IN SITU ETCHING OF SILICON SUBSTRATES PRIOR TO EPITAXIAL GROWTH [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (2P1) : 156 - &

[4] DASH WC, 1960, PROPERTIES ELEMENTAL, P195

[5] DESIRANT M, 1960, SOLID STAT PHYSIC ED, P318

[6] FAUST JW, 1965, 4 P ANN S PHYS FAIL

[7] FAUST JW, 1962, METALLURGY SEMICONDU, P181

[8] GATOS HC, 1960, PROPERTIES ELEMEN ED, P103

[9] GATOS HC, 1960, PROPERTIES ELEMEN ED, P195

[10] AVALANCHE EFFECTS IN SILICON P-N JUNCTIONS .2. STRUCTURALLY PERFECT JUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (06) : 1591 - +

[1] SMALL PARTICLES IN SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (08) : 1011 - 1012

[2] METHOD OF PREPARING SI AND GE SPECIMENS FOR EXAMINATION BY TRANSMISSION ELECTRON MICROSCOPY [J]. BRITISH JOURNAL OF APPLIED PHYSICS, 1962, 13 (09): : 446 - &

[3] IN SITU ETCHING OF SILICON SUBSTRATES PRIOR TO EPITAXIAL GROWTH [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (2P1) : 156 - &

[4] DASH WC, 1960, PROPERTIES ELEMENTAL, P195

[5] DESIRANT M, 1960, SOLID STAT PHYSIC ED, P318

[6] FAUST JW, 1965, 4 P ANN S PHYS FAIL

[7] FAUST JW, 1962, METALLURGY SEMICONDU, P181

[8] GATOS HC, 1960, PROPERTIES ELEMEN ED, P103

[9] GATOS HC, 1960, PROPERTIES ELEMEN ED, P195

[10] AVALANCHE EFFECTS IN SILICON P-N JUNCTIONS .2. STRUCTURALLY PERFECT JUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (06) : 1591 - +