RAMAN-SCATTERING STUDY OF COUPLED HOLE-PLASMON - LO-PHONON MODES IN P-TYPE GAAS AND P-TYPE ALXGA1-XAS

被引：46

作者：

YUASA, T ^{[1
]}

ISHII, M ^{[1
]}

机构：

[1] OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN

来源：

PHYSICAL REVIEW B | 1987年 / 35卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.35.3962

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3962 / 3970

页数：9

共 19 条

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[9] RAMAN-SCATTERING BY COUPLED LO-PHONON PLASMON MODES AND FORBIDDEN TO-PHONON RAMAN-SCATTERING IN HEAVILY DOPED P-TYPE GAAS [J].

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[10]

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