STRAIN FIELD AND ANGULAR MISALIGNMENT IN PSEUDOMORPHIC EPITAXIAL SYSTEMS WITH SI (111) SUBSTRATES

被引：6

作者：

TEMPEL, A

ZEHE, A

机构：

来源：

SOLID STATE COMMUNICATIONS | 1989年 / 69卷 / 02期

关键词：

D O I：

10.1016/0038-1098(89)90381-5

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：151 / 153

页数：3

共 10 条

[1] STRAIN-MEASUREMENT OF EPITAXIAL CAF2 ON SI(111) BY MEV ION CHANNELING [J].

HASHIMOTO, S ;

PENG, JL ;

GIBSON, WM ;

SCHOWALTER, LJ ;

FATHAUER, RW .

APPLIED PHYSICS LETTERS, 1985, 47 (10) :1071-1073

[2] PRESSURE DEPENDENCE OF ELASTIC CONSTANTS AND AN EXPERIMENTAL EQUATION OF STATE FOR CAF2 [J].

HO, PS ;

RUOFF, AL .

PHYSICAL REVIEW, 1967, 161 (03) :864-&

[3] SOME NEW TECHNIQUES IN REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION (RHEED) APPLICATION TO SURFACE-STRUCTURE STUDIES [J].

INO, S .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (06) :891-908

[4] LOW-TEMPERATURE SURFACE CLEANING OF SILICON AND ITS APPLICATION TO SILICON MBE [J].

ISHIZAKA, A ;

SHIRAKI, Y .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (04) :666-671

[5]

MATHEWS JW, 1975, J CRYST GROWTH, V29, P273

[6] STRAINED-LAYER SUPER-LATTICES FROM LATTICE MISMATCHED MATERIALS [J].

OSBOURN, GC .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (03) :1586-1589

[7] INXGA1-XAS-INYGA1-YAS STRAINED-LAYER SUPER-LATTICES - A PROPOSAL FOR USEFUL, NEW ELECTRONIC MATERIALS [J].

OSBOURN, GC .

PHYSICAL REVIEW B, 1983, 27 (08) :5126-5128

[8]

Paufler P., 1986, PHYSIKALISCHE KRISTA

[9] THERMAL-EXPANSION OF CAF2 FROM 298 TO 1173K [J].

SCHUMANN, B ;

NEUMANN, H .

CRYSTAL RESEARCH AND TECHNOLOGY, 1984, 19 (01) :K13-K14

[10]

TEMPEL A, UNPUB PHYS STAT SOL

← 1 →