STRAIN-MEASUREMENT OF EPITAXIAL CAF2 ON SI(111) BY MEV ION CHANNELING

被引：96

作者：

HASHIMOTO, S ^{[1
]}

PENG, JL ^{[1
]}

GIBSON, WM ^{[1
]}

SCHOWALTER, LJ ^{[1
]}

FATHAUER, RW ^{[1
]}

机构：

[1] GE,CTR RES & DEV,SCHENECTADY,NY 12301

来源：

APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 10期

关键词：

D O I：

10.1063/1.96383

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1071 / 1073

页数：3

共 11 条

[1] EPITAXIAL RELATIONS IN GROUP-IIA FLUORIDE SI(111) HETEROSTRUCTURES [J].

ASANO, T ;

ISHIWARA, H .

APPLIED PHYSICS LETTERS, 1983, 42 (06) :517-519

[2] MBE-GROWN FLUORIDE FILMS - A NEW CLASS OF EPITAXIAL DIELECTRICS [J].

FARROW, RFC ;

SULLIVAN, PW ;

WILLIAMS, GM ;

JONES, GR ;

CAMERON, DC .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :415-420

[3]

FIORY AT, 1984, THIN FILMS INTERFACE, V2, P497

[4]

HASHIMOTO S, UNPUB NUCL INSTRUM M

[5]

HASHIMOTO S, 1985, 7TH P INT C ION BEAM

[6]

HASHIMOTO S, 1985, UNPUB 1ST P INT SI M

[7]

HASHIMOTO S, 1985, 11TH P INT C AT COLL

[8] PRESSURE DEPENDENCE OF ELASTIC CONSTANTS AND AN EXPERIMENTAL EQUATION OF STATE FOR CAF2 [J].

HO, PS ;

RUOFF, AL .

PHYSICAL REVIEW, 1967, 161 (03) :864-&

[9]

Landau L., 1959, THEORY ELASTICITY, P52

[10] EPITAXIAL-GROWTH AND CHARACTERIZATION OF CAF2 ON SI [J].

SCHOWALTER, LJ ;

FATHAUER, RW ;

GOEHNER, RP ;

TURNER, LG ;

DEBLOIS, RW ;

HASHIMOTO, S ;

PENG, JL ;

GIBSON, WM ;

KRUSIUS, JP .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (01) :302-308

← 1 2 →