EPITAXIAL RELATIONS IN GROUP-IIA FLUORIDE SI(111) HETEROSTRUCTURES

[1] AN EPITAXIAL SI/INSULATOR/SI STRUCTURE PREPARED BY VACUUM DEPOSITION OF CAF2 AND SILICON [J]. THIN SOLID FILMS, 1982, 93 (1-2) : 143 - 150

[2] FORMATION OF AN EPITAXIAL SI INSULATOR SI STRUCTURE BY VACUUM DEPOSITION OF CAF2 AND SI [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1982, 21 (01) : 187 - 191

[3] MBE-GROWN FLUORIDE FILMS - A NEW CLASS OF EPITAXIAL DIELECTRICS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 415 - 420

[4] THE EFFECTS OF NUCLEATION AND GROWTH ON EPITAXY IN THE COSI2/SI SYSTEM [J]. THIN SOLID FILMS, 1982, 93 (1-2) : 99 - 108

[5] SILICON INSULATOR HETERO-EPITAXIAL STRUCTURES FORMED BY VACUUM DEPOSITION OF CAF2 AND SI [J]. APPLIED PHYSICS LETTERS, 1982, 40 (01) : 66 - 68

[6] ISHIWARA H, UNPUB JPN J APPL P S, V22

[7] PHILLIPS JM, 1982 MAT RES SOC M, P112

[8] EPITAXIAL SILICIDES [J]. THIN SOLID FILMS, 1982, 93 (1-2) : 77 - 90

[9] GROWTH OF SINGLE-CRYSTAL COSI2 ON SI (111) [J]. APPLIED PHYSICS LETTERS, 1982, 40 (08) : 684 - 686

[1] AN EPITAXIAL SI/INSULATOR/SI STRUCTURE PREPARED BY VACUUM DEPOSITION OF CAF2 AND SILICON [J]. THIN SOLID FILMS, 1982, 93 (1-2) : 143 - 150

[2] FORMATION OF AN EPITAXIAL SI INSULATOR SI STRUCTURE BY VACUUM DEPOSITION OF CAF2 AND SI [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1982, 21 (01) : 187 - 191

[3] MBE-GROWN FLUORIDE FILMS - A NEW CLASS OF EPITAXIAL DIELECTRICS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 415 - 420

[4] THE EFFECTS OF NUCLEATION AND GROWTH ON EPITAXY IN THE COSI2/SI SYSTEM [J]. THIN SOLID FILMS, 1982, 93 (1-2) : 99 - 108

[5] SILICON INSULATOR HETERO-EPITAXIAL STRUCTURES FORMED BY VACUUM DEPOSITION OF CAF2 AND SI [J]. APPLIED PHYSICS LETTERS, 1982, 40 (01) : 66 - 68

[6] ISHIWARA H, UNPUB JPN J APPL P S, V22

[7] PHILLIPS JM, 1982 MAT RES SOC M, P112

[8] EPITAXIAL SILICIDES [J]. THIN SOLID FILMS, 1982, 93 (1-2) : 77 - 90

[9] GROWTH OF SINGLE-CRYSTAL COSI2 ON SI (111) [J]. APPLIED PHYSICS LETTERS, 1982, 40 (08) : 684 - 686