GROWTH OF SINGLE-CRYSTAL COSI2 ON SI (111)

[1] SILICON METAL SILICIDE HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1980, 37 (07) : 643 - 646

[2] INTERFACIAL ORDER IN EPITAXIAL NISI2 [J]. APPLIED PHYSICS LETTERS, 1980, 36 (07) : 544 - 547

[3] INTERFACE AND SURFACE-STRUCTURE OF EPITAXIAL NISI2 FILMS [J]. APPLIED PHYSICS LETTERS, 1981, 38 (12) : 988 - 990

[4] FOLL H, 1981, J APPL PHYS, V52, P250

[5] GIBSON JM, 1981, P MICROSCOPY SEMICON

[6] INTERACTIONS IN CO-SI THIN-FILM SYSTEM .1. KINETICS [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) : 4005 - 4010

[7] MATTHEWS JW, 1975, EPITAXIAL GROWTH, pCH7

[8] REFRACTORY SILICIDES FOR INTEGRATED-CIRCUITS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (04): : 775 - 792

[9] Poate J M, 1978, THIN FILMS INTERDIFF

[10] FORMATION OF A DOUBLE-HETERO SI-COSI2-SI STRUCTURE USING MOLECULAR-BEAM AND SOLID-PHASE EPITAXIES [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (01) : 49 - 54

[1] SILICON METAL SILICIDE HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1980, 37 (07) : 643 - 646

[2] INTERFACIAL ORDER IN EPITAXIAL NISI2 [J]. APPLIED PHYSICS LETTERS, 1980, 36 (07) : 544 - 547

[3] INTERFACE AND SURFACE-STRUCTURE OF EPITAXIAL NISI2 FILMS [J]. APPLIED PHYSICS LETTERS, 1981, 38 (12) : 988 - 990

[4] FOLL H, 1981, J APPL PHYS, V52, P250

[5] GIBSON JM, 1981, P MICROSCOPY SEMICON

[6] INTERACTIONS IN CO-SI THIN-FILM SYSTEM .1. KINETICS [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) : 4005 - 4010

[7] MATTHEWS JW, 1975, EPITAXIAL GROWTH, pCH7

[8] REFRACTORY SILICIDES FOR INTEGRATED-CIRCUITS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (04): : 775 - 792

[9] Poate J M, 1978, THIN FILMS INTERDIFF

[10] FORMATION OF A DOUBLE-HETERO SI-COSI2-SI STRUCTURE USING MOLECULAR-BEAM AND SOLID-PHASE EPITAXIES [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (01) : 49 - 54