FORMATION OF AN EPITAXIAL SI INSULATOR SI STRUCTURE BY VACUUM DEPOSITION OF CAF2 AND SI

被引：15

作者：

ASANO, T

ISHIWARA, H

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1982年 / 21卷 / 01期

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D O I：

10.7567/JJAPS.21S1.187

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：187 / 191

页数：5

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