INSITU OBSERVATION OF POLYSILICON NUCLEATION AND GROWTH

[1] EARLY GROWTH OF SILICON ON SAPPHIRE .1. TRANSMISSION ELECTRON MICROSOPY [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (12) : 5139 - 5150

[2] INVESTIGATION OF EFFECTIVE-MEDIUM MODELS OF MICROSCOPIC SURFACE-ROUGHNESS BY SPECTROSCOPIC ELLIPSOMETRY [J]. PHYSICAL REVIEW B, 1979, 20 (08): : 3292 - 3302

[3] BLOEM J, 1978, CURRENT TOPICS MATER, V1, P147

[4] Calculation of various physics constants in heterogenous substances I Dielectricity constants and conductivity of mixed bodies from isotropic substances [J]. ANNALEN DER PHYSIK, 1935, 24 (07) : 636 - 664

[5] THE GROWTH OF CRYSTALS AND THE EQUILIBRIUM STRUCTURE OF THEIR SURFACES [J]. PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1951, 243 (866) : 299 - 358

[6] CADORET R, UNPUB

[7] GROWTH KINETICS AND CAPTURE OF IMPURITIES DURING GAS-PHASE CRYSTALLIZATION [J]. JOURNAL OF CRYSTAL GROWTH, 1977, 42 (DEC) : 55 - 76

[8] NUCLEATION OF CVD SILICON ON SIO2 AND SI3N4 SUBSTRATES .1. SIH4-HCL-H2 SYSTEM AT HIGH-TEMPERATURES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (01) : 194 - 202

[9] INFLUENCE OF ASH3, PH3, AND B2H6 ON GROWTH-RATE AND RESISTIVITY OF POLYCRYSTALLINE SILICON FILMS DEPOSITED FROM A SIH4-H2 MIXTURE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (01) : 106 - 110

[10] OPTICAL-PROPERTIES OF ULTRAFINE GOLD PARTICLES [J]. PHYSICAL REVIEW B, 1977, 16 (08) : 3513 - 3534

[1] EARLY GROWTH OF SILICON ON SAPPHIRE .1. TRANSMISSION ELECTRON MICROSOPY [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (12) : 5139 - 5150

[2] INVESTIGATION OF EFFECTIVE-MEDIUM MODELS OF MICROSCOPIC SURFACE-ROUGHNESS BY SPECTROSCOPIC ELLIPSOMETRY [J]. PHYSICAL REVIEW B, 1979, 20 (08): : 3292 - 3302

[3] BLOEM J, 1978, CURRENT TOPICS MATER, V1, P147

[4] Calculation of various physics constants in heterogenous substances I Dielectricity constants and conductivity of mixed bodies from isotropic substances [J]. ANNALEN DER PHYSIK, 1935, 24 (07) : 636 - 664

[5] THE GROWTH OF CRYSTALS AND THE EQUILIBRIUM STRUCTURE OF THEIR SURFACES [J]. PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1951, 243 (866) : 299 - 358

[6] CADORET R, UNPUB

[7] GROWTH KINETICS AND CAPTURE OF IMPURITIES DURING GAS-PHASE CRYSTALLIZATION [J]. JOURNAL OF CRYSTAL GROWTH, 1977, 42 (DEC) : 55 - 76

[8] NUCLEATION OF CVD SILICON ON SIO2 AND SI3N4 SUBSTRATES .1. SIH4-HCL-H2 SYSTEM AT HIGH-TEMPERATURES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (01) : 194 - 202

[9] INFLUENCE OF ASH3, PH3, AND B2H6 ON GROWTH-RATE AND RESISTIVITY OF POLYCRYSTALLINE SILICON FILMS DEPOSITED FROM A SIH4-H2 MIXTURE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (01) : 106 - 110

[10] OPTICAL-PROPERTIES OF ULTRAFINE GOLD PARTICLES [J]. PHYSICAL REVIEW B, 1977, 16 (08) : 3513 - 3534