WAVELENGTH DEMULTIPLEXING HETEROJUNCTION PHOTOTRANSISTOR

被引：21

作者：

UNLU, MS ^{[1
]}

KISHINO, K ^{[1
]}

CHYI, JI ^{[1
]}

REED, J ^{[1
]}

ARSENAULT, L ^{[1
]}

MORKOC, H ^{[1
]}

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

来源：

ELECTRONICS LETTERS | 1990年 / 26卷 / 22期

关键词：

Demultiplexing; Optical receivers; Phototransistors;

D O I：

10.1049/el:19901194

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Experimental and theoretical results on a wavelength demultiplexing receiver composed of an AlGaAs/GaAs heterojunction phototransistor (HPT) integrated within a resonant cavity are reported. A high quality factor cavity was formed using a very thin In0.05Ga0.95As active absorption layer in the collector depletion region of the HPT. Crosstalk attenuations of 15dB for dual and 12dB for triple wavelength demultiplexing were demonstrated. The individual HPTs had an optical gain of 500 at the resonant modes. Theoretical calculations predict crosstalk attenuation levels as high as 40 dB with high reflection mirrors on both ends of the cavity. © 1990, The Institution of Electrical Engineers. All rights reserved.

引用

页码：1857 / 1858

页数：2

共 8 条

[1] MONOLITHIC INTEGRATION OF MULTILAYER FILTER ON VERTICAL SURFACE OF SEMICONDUCTOR SUBSTRATE BY A BIAS-SPUTTERING TECHNIQUE [J].