HOT-ELECTRON ATTENUATION LENGTH IN AG-INP SCHOTTKY BARRIERS

被引:15
作者
ESCHER, JS
GREGORY, PE
MALONEY, TJ
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1979年 / 16卷 / 05期
关键词
D O I
10.1116/1.570207
中图分类号
O59 [应用物理学];
学科分类号
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页码:1394 / 1397
页数:4
相关论文
共 29 条
[1]  
ANTYPAS GA, IPC39 INP MAT VAR AS
[2]   TRANSFERRED ELECTRON PHOTOEMISSION FROM INP [J].
BELL, RL ;
JAMES, LW ;
MOON, RL .
APPLIED PHYSICS LETTERS, 1974, 25 (11) :645-646
[3]  
BERGLUND CN, 1964, PHYS REV A-GEN PHYS, V136, P1030
[4]   SINGLE-CRYSTAL-ALUMINUM SCHOTTKY-BARRIER DIODES PREPARED BY MOLECULAR-BEAM EPITAXY (MBE) ON GAAS [J].
CHO, AY ;
DERNIER, PD .
JOURNAL OF APPLIED PHYSICS, 1978, 49 (06) :3328-3332
[5]   ATTENUATION LENGTH MEASUREMENTS OF HOT ELECTRONS IN METAL FILMS [J].
CROWELL, CR ;
HOWARTH, LE ;
SPITZER, WG ;
LABATE, EE .
PHYSICAL REVIEW, 1962, 127 (06) :2006-&
[6]  
CROWELL CR, 1967, PHYS THIN FILMS, V4, P325
[7]   SCHOTTKY-BARRIER HEIGHT OF AU-PARA-INGAASP ALLOYS LATTICE-MATCHED TO INP [J].
ESCHER, JS ;
JAMES, LW ;
SANKARAN, R ;
ANTYPAS, GA ;
MOON, RL ;
BELL, RL .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (04) :874-875
[8]  
ESCHER JS, 1977, IEEE IEDM TECHNI DEC, P460
[9]   EPITAXIAL-GROWTH OF AG FILMS ON INP(001) BY ATOMIC-BEAM EPITAXY IN ULTRAHIGH-VACUUM [J].
FARROW, RFC .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1977, 10 (10) :L135-L138
[10]   The analysis of photoelectric sensitivity curves for clean metals at various temperatures [J].
Fowler, RH .
PHYSICAL REVIEW, 1931, 38 (01) :45-56