MOLECULAR-BEAM-EPITAXIAL GROWTH OF N-ALGAAS ON CLEAN CL-2-GAS ETCHED GAAS-SURFACES AND THE FORMATION OF HIGH MOBILITY 2-DIMENSIONAL ELECTRON-GAS AT THE ETCH-REGROWN INTERFACES

被引：20

作者：

KADOYA, Y

NOGE, H

KANO, H

SAKAKI, H

IKOMA, N

NISHIYAMA, N

机构：

[1] UNIV TOKYO,ADV SCI & TECHNOL RES CTR,MEGURO KU,TOKYO 153,JAPAN

[2] SUMITOMO ELECT IND LTD,OPTOELECTR RES & DEV LABS,SAKAE KU,YOKOHAMA,KANAGAWA 244,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 14期

关键词：

D O I：

10.1063/1.108496

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

By using an ultrahigh vacuum multichamber process system, very clean GaAs surface is successfully prepared by chlorine-gas etching and AlGaAs is subsequently grown by molecular beam epitaxy to show that two-dimensional electron gas is successfully formed at etch-regrown AlGaAs/GaAs interface. Mobility as high as 114000 cm2/Vs at 9.8 K is achieved for the carrier concentration N(S)=4.5 X 10(11) CM-2 . From the secondary-ion-mass-spectroscopy measurement, the carbon concentration at the interface is estimated to be 2 X 10(10) CM-2, and is found to be a dominant scatterer for the two-dimensional electrons. A transmission-electron-microscope image has evidenced a very flat feature of etch-regrown interface.

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页码：1658 / 1660

页数：3

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