MASKLESS ETCHING OF GAAS AND INP USING A SCANNING MICROPLASMA

[1] THERMODYNAMIC APPROACH TO QUANTITATIVE INTERPRETATION OF SPUTTERED ION MASS-SPECTRA [J]. ANALYTICAL CHEMISTRY, 1973, 45 (08) : 1421 - 1438

[2] ION-ASSISTED AND ELECTRON-ASSISTED GAS-SURFACE CHEMISTRY - IMPORTANT EFFECT IN PLASMA-ETCHING [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) : 3189 - 3196

[3] ION-BEAM ASSISTED MASKLESS ETCHING OF GAAS BY 50 KEV FOCUSED ION-BEAM [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (12): : L792 - L794

[4] GAMO K, 1980, P INT C MICROCIRCUIT

[5] A NOVEL ANISOTROPIC DRY ETCHING TECHNIQUE [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (04): : 1390 - 1393

[6] ION ENHANCED GAS-SURFACE REACTIONS - A KINETIC-MODEL FOR THE ETCHING MECHANISM [J]. SURFACE SCIENCE, 1981, 103 (2-3) : 524 - 534

[7] MASS AND ENERGY-DISTRIBUTION OF PARTICLES SPUTTER ETCHED FROM SI IN A XEF2 ENVIRONMENT [J]. APPLIED PHYSICS LETTERS, 1982, 41 (02) : 174 - 176

[8] PLASMA-ETCHING OF III-V-COMPOUND SEMICONDUCTOR-MATERIALS AND THEIR OXIDES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (01): : 12 - 16

[9] CHEMICAL SPUTTERING OF FLUORINATED SILICON [J]. PHYSICAL REVIEW B, 1981, 23 (02): : 823 - 835

[1] THERMODYNAMIC APPROACH TO QUANTITATIVE INTERPRETATION OF SPUTTERED ION MASS-SPECTRA [J]. ANALYTICAL CHEMISTRY, 1973, 45 (08) : 1421 - 1438

[2] ION-ASSISTED AND ELECTRON-ASSISTED GAS-SURFACE CHEMISTRY - IMPORTANT EFFECT IN PLASMA-ETCHING [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) : 3189 - 3196

[3] ION-BEAM ASSISTED MASKLESS ETCHING OF GAAS BY 50 KEV FOCUSED ION-BEAM [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (12): : L792 - L794

[4] GAMO K, 1980, P INT C MICROCIRCUIT

[5] A NOVEL ANISOTROPIC DRY ETCHING TECHNIQUE [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (04): : 1390 - 1393

[6] ION ENHANCED GAS-SURFACE REACTIONS - A KINETIC-MODEL FOR THE ETCHING MECHANISM [J]. SURFACE SCIENCE, 1981, 103 (2-3) : 524 - 534

[7] MASS AND ENERGY-DISTRIBUTION OF PARTICLES SPUTTER ETCHED FROM SI IN A XEF2 ENVIRONMENT [J]. APPLIED PHYSICS LETTERS, 1982, 41 (02) : 174 - 176

[8] PLASMA-ETCHING OF III-V-COMPOUND SEMICONDUCTOR-MATERIALS AND THEIR OXIDES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (01): : 12 - 16

[9] CHEMICAL SPUTTERING OF FLUORINATED SILICON [J]. PHYSICAL REVIEW B, 1981, 23 (02): : 823 - 835