CHEMICAL SPUTTERING OF FLUORINATED SILICON

被引：241

作者：

TU, YY

CHUANG, TJ

WINTERS, HF

机构：

[1] IBM CORP,RES LAB,SAN JOSE,CA 95193

[2] ODENSE UNIV,INST FYS,DK-5000 ODENSE,DENMARK

来源：

PHYSICAL REVIEW B | 1981年 / 23卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.23.823

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：823 / 835

页数：13

共 32 条

[1] ENERGY AND FLUENCE DEPENDENCE OF THE SPUTTERING YIELD OF SILICON BOMBARDED WITH ARGON AND XENON [J].

BLANK, P ;

WITTMAACK, K .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (03) :1519-1528

[2] ELECTRON-SPECTROSCOPY STUDY OF SILICON SURFACES EXPOSED TO XEF2 AND THE CHEMISORPTION OF SIF4 ON SILICON [J].

CHUANG, TJ .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (05) :2614-2619

[3]

Coburn Julie, COMMUNICATION

[4] ION-SURFACE INTERACTIONS IN PLASMA ETCHING [J].

COBURN, JW ;

WINTERS, HF ;

CHUANG, TJ .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (08) :3532-3540

[5] PLASMA-ETCHING - DISCUSSION OF MECHANISMS [J].

COBURN, JW ;

WINTERS, HF .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02) :391-403

[6] POSITIVE-ION BOMBARDMENT OF SUBSTRATES IN RF DIODE GLOW-DISCHARGE SPUTTERING [J].

COBURN, JW ;

KAY, E .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (12) :4965-4971

[7] SOME CHEMICAL ASPECTS OF THE FLUOROCARBON PLASMA ETCHING OF SILICON AND ITS COMPOUNDS [J].

COBURN, JW ;

KAY, E .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1979, 23 (01) :33-41

[8]

COBURN JW, 1979, J APPL PHYS, V50, P3198

[9] ION ENERGIES AT CATHODE OF A GLOW DISCHARGE [J].

DAVIS, WD ;

VANDERSLICE, TA .

PHYSICAL REVIEW, 1963, 131 (01) :219-&

[10] REACTION OF FLUORINE-ATOMS WITH SIO2 [J].

FLAMM, DL ;

MOGAB, CJ ;

SKLAVER, ER .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (10) :6211-6213

← 1 2 3 4 →