PROPERTIES OF A-SI-H-F DEPOSITED IN SIF4-SIH4-AR GAS-MIXTURES BY A GLOW-DISCHARGE TECHNIQUE

被引：10

作者：

USUI, S

SAWADA, A

KIKUCHI, M

机构：

来源：

关键词：

D O I：

10.1016/0022-3093(80)90160-X

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：151 / 159

页数：9

共 7 条

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[4] NEW AMORPHOUS SILICON-BASED ALLOY FOR ELECTRONIC APPLICATIONS
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MADAN, A
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[5] OVSHINSKY SR, 1978, NEW SCI, V30, P674
[6] REVERSIBLE CONDUCTIVITY CHANGES IN DISCHARGE-PRODUCED AMORPHOUS SI
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WRONSKI, CR
[J]. APPLIED PHYSICS LETTERS, 1977, 31 (04) : 292 - 294
[7] PROPERTIES OF HEAVILY DOPED GD-SI WITH LOW RESISTIVITY
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[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1979, 34 (01) : 1 - 1